I was able to bring the other channel to the same THD+N performance. While I was at it, I tried the current production low-noise JFET from Toshiba, the 2SK209. The first 2 from the cut tape matched really well at 5.9mA Idss at Vds=10V. I'm surprised that I was able to do it without using the microscope or magnifying glass (pardon the flux residue though). I guess I no longer need to pay the hefty price to get the LSK389 or the obsolete K170s.
Regarding jacking up the bias of the SiC FET, it has its limits. The original bias resistors set the SiC FET G at 450*20/(175+175+20) = 24.3V to B- with a -450V supply. After adding 260k in parallel with the 175k Ohm resistor, I was able to set the G at 27V to B- with a -407V supply. Note that the VGSmax for the G2R1000MT17D and the C2M1000170D are 25V, and is 23V for the MSC750SMA170B. So I'd better dial it back a little. In normal operating conditions, the voltage on the 20k resistor will never apply entirely to the G-S. But it kind of tells me how intricate the original design was, with all corner cases considered.